Novel Silicon Detector Development and Processing for Nuclear and High Energy Physics and Photon Science at BNL (Zheng Li)

Monday 9 Sept 2013, 13:30 → 14:30 Asia/Tokyo

NIshina Hall (RIKEN)

Recent developments and fabrications of novel and prototype Si detectors at BNL for applications in nuclear physics, high energy physics, and photon science are summarized. These detectors include Si strip detectors, Si pad and pixel detectors, Si drift detectors, and Si stripixel detectors. Operation principles and application areas of various detector types will be presented. New detectors for application in extreme radiation environments (such as HL-LHC) and for requirements of ultra-fast detectors are also under development. The new BNL 3D-Trench Electrode detectors are extremely radiation hard (up to 1x1016 neq (1 MeV equivalent)/cm2), and can be ultra-fast up to 100’s of ps. They can also be efficient neutron detectors with boron doping. Thin detectors under development for dE/dx and for ultra-fast applications (up to 10’s of ps) will also be described.