Speaker
Description
Diamond is a wide bandgap semiconductor with excellent physical properties, such as breakdown voltage and thermal conductivity. It is expected to achieve performance beyond existing devices if it is applied as an electronic device. For this purpose, it is necessary to fabricate n-type semiconductors that can operate at room temperature, using lithium as a dopant. However, this has yet to be put to practical use due to the physical properties of lithium and the problems associated with ion implantation.
In this study, we propose using the nuclear transmutation of 7Be, a radioactive isotope of beryllium, to fabricate Li-doped diamonds without lattice detects. Be would diffuse into the diamond by thermal annealing, and if it is injected into the surface layer, it can be distributed throughout the diamond without damaging the diamond lattice. Furthermore, 7Be converts to the stable isotope 7Li by an electron capture reaction and does not emit ionizing radiation which can break the lattice. Therefore, if 7Be is injected into the surface layer of the diamond with enough energy to prevent lattice defects and then thermally diffused, it is possible to fabricate a diamond with a distribution of 7Be without lattice defects. Since the half-life of 7Be is 53 days, a Li-doped diamond will be obtained several periods after implantation of 7Be.
In this presentation, we will overview our research and report on the results of ion implantation and thermal diffusion experiments using 9Be.
| Themes for the contribution | 1 R&D to support concepts |
|---|
